Material categorization: for definitions of
compliance please see www. vishay. com/doc?99912
Ordering Information: SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free).
Full PDF Text Transcription for SiZF906DT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiZF906DT. For precise diagrams, and layout, please refer to the original PDF.
CT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.00380 at VGS = 10 V 0.00530 at VGS = 4.5 V 0.00117 at VGS = 10 V 0.00158 at VGS = 4.5 V ID (A) 60 a 60 a 60 a 60 a Qg (TYP.) 11 nC 46 nC FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.