Full PDF Text Transcription for SiZF914DT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiZF914DT. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiZF914DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with in...
View more extracted text
RES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • G1 return/S1 pin for enhancing high side driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 25 25 0.00380 0.00090 0.00620 0.00150 6.
SiZF914DT Datasheet
