Datasheet4U Logo Datasheet4U.com

V10PM12-M3 Datasheet High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number V10PM12-M3
Manufacturer Vishay
File Size 92.96 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PM12-M3 Datasheet

Overview

www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
V10PM12 Trench MOS Barrier Schottky Rectifier
V10PM12HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10PM10 Trench MOS Barrier Schottky Rectifier
V10PM15 Trench MOS Barrier Schottky Rectifier
V10PM45 Trench MOS Barrier Schottky Rectifier
V10PM6 Trench MOS Barrier Schottky Rectifier
V10P10 Trench MOS Barrier Schottky Rectifier
V10P12 Trench MOS Barrier Schottky Rectifier
V10P15 Trench MOS Barrier Schottky Rectifier
V10P20 Trench MOS Barrier Schottky Rectifier