V10PM12-M3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V10PM12-M3
Manufacturer	Vishay
File Size	92.96 KB
Description	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V10PM12-M3-Vishay.pdf

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Mar 25, 2016 |