Datasheet4U Logo Datasheet4U.com

V10PM15 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – V10PM15

Datasheet Details

Part number V10PM15
Manufacturer Vishay
File Size 102.53 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V10PM15 Datasheet
Additional preview pages of the V10PM15 datasheet.
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com V10PM15 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 10.0 A VRRM 150 V IFSM VF at IF = 10.0 A (TA = 125 °C) 180 A 0.66 V TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.
Published: |