V10PM12-M3 Datasheet | Vishay

.vishay. V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS® e SMP® Series 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 Features - Very low profile - typical height of 1.1 mm Available - Ideal for automated placement - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 120 V 160 A 0.63 V 150 °C TO-277A (SMPC) Diode variation Single die MECHANICAL DATA Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial grade Base...