* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli
V12WM100C-M3 Datasheet (117.67 KB)
V12WM100C-M3
117.67 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com V12WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A TMBS® TO-252 .
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