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V15P45S-M3 Datasheet SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers

Manufacturer: Vishay

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Datasheet Details

Part number V15P45S-M3
Manufacturer Vishay
File Size 100.33 KB
Description SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers
Download V15P45S-M3 Download (PDF)

Overview

www.vishay.com V15P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 15 A 45 V 210 A 0.

Key Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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