V15P45S-M3 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Material categorization: For definitions of pliance
- Part: V15P45S-M3
- Manufacturer: Vishay (official site)
- Size: 100.33 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V15P45S | SMD Photovoltaic Solar Cell Protection Schottky Rectifiers |
| V15P45 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V15P45-M3 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V15P45HM3 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
| V15P10 | Trench MOS Barrier Schottky Rectifier |
V15P45S-M3 Description
Package 15 A 45 V 210 A 0.42 V 150 °C TO-277A (SMPC) Diode variation Single die.