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V1P6 Datasheet Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number V1P6
Manufacturer Vishay
File Size 102.86 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V1P6 Datasheet

Overview

www.vishay.com V1P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 60 V 25 A VF at IF = 1.0 A (125 °C) 0.45 V TJ max.

Key Features

  • Very low profile - typical height of 0.65 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop.
  • Low power loss, high efficiency.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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