V1PM10 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

Very low profile - typical height of 0.65 mm.
Ideal for automated placement Available.
Trench MOS Schottky technology.
Low forward voltage drop.
Low power loss, high efficiency.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V1PM10
Manufacturer	Vishay
File Size	96.72 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V1PM10 Datasheet
Additional preview pages of the V1PM10 datasheet.

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Full PDF Text Transcription

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www.vishay.com V1PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement Available • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: May 6, 2020 |