• Part: V1P6
  • Description: Surface Mount Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 102.86 KB
Download V1P6 Datasheet PDF
Vishay
V1P6
V1P6 is Surface Mount Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® e SMP® Series Top View Bottom View Micro SMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 60 V 25 A VF at IF = 1.0 A (125 °C) 0.45 V TJ max. Package 150 °C Micro SMP (DO-219AD) Circuit configuration Single Features - Very low profile - typical height of 0.65 mm Available - Ideal for automated placement - Trench MOS Schottky technology - Low forward voltage drop - Low power loss, high efficiency - Meets MSL level 1, per J-STD-020, LF maximum peak of 260...