V1P6 - Surface Mount Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

Very low profile - typical height of 0.65 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop.
Low power loss, high efficiency.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	V1P6
Manufacturer	Vishay
File Size	102.86 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V1P6 Datasheet
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www.vishay.com V1P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 60 V 25 A VF at IF = 1.0 A (125 °C) 0.45 V TJ max. Package 150 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.

Published: Jun 4, 2019 |