V1PM12
V1PM12 is Surface Mount Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® e SMP® Series
Top View
Bottom View
Micro SMP (DO-219AD)
Anode
Cathode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
1.0 A 120 V 25 A
VF at IF = 1.0 A (125 °C)
0.61 V
TJ max. Package
175 °C Micro SMP (DO-219AD)
Circuit configuration
Single
Features
- Very low profile
- typical height of 0.65 mm
Available
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop
- Low power loss, high efficiency
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260...
