V1PM12 Overview
V1PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 120 V 25 A VF at IF = 1.0 A (125 °C) 0.61 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single.
V1PM12 Key Features
- Very low profile
- typical height of 0.65 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop
- Low power loss, high efficiency
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912