V20DL45 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V20DL45 Vishay General Semiconductor Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM IFSM 45 V 160 A VF at IF = 20 A (TA = 125 °C) 0.50 V TJ max.

Datasheet Details

Part number	V20DL45
Manufacturer	Vishay
File Size	116.20 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V20DL45-Vishay.pdf

Key Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICA.

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