V20M100M-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization:
- Part: V20M100M-E3
- Manufacturer: Vishay (official site)
- Size: 96.07 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V20M120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V20M120M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V20100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
V20M100M-E3 Description
V20M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TMBS ® TO-220AB.