* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please see www.visha
V20M120C Datasheet (146.97 KB)
V20M120C
146.97 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V20M120C, VI20M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF .
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