V20M120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- AEC-Q101 qualified
- Material categorization: for definitions of pliance
- Part: V20M120C
- Manufacturer: Vishay (official site)
- Size: 146.97 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V20M120M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V20M100M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V20100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
V20M120C Description
Package 175 °C TO-220AB, TO-262AA Diode variations Dual mon cathode.