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V20M120M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V20M120M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V20M120M-E3

Datasheet Details

Part number	V20M120M-E3
Manufacturer	Vishay
File Size	93.72 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20M120M-E3 Datasheet
Additional preview pages of the V20M120M-E3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V20M120M PIN 1 PIN 3 PIN 2 CASE.

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Published: Aug 22, 2017 |