Datasheet4U Logo Datasheet4U.com

V20M120M-E3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number V20M120M-E3
Manufacturer Vishay
File Size 93.72 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download V20M120M-E3 Download (PDF)

Overview

www.vishay.com V20M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 V20M120M PIN 1 PIN 3 PIN 2 CASE.

More Datasheets from Vishay

Part Number Description
V20M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100S High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V20100SG High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20120S High-Voltage Trench MOS Barrier Schottky Rectifier