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Vishay Intertechnology Electronic Components Datasheet

V30100PW-M3 Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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www.vishay.com
V30100PW-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 8 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
100 V
IFSM
EAS at L = 60 mH
120 A
150 mJ
VF at IF = 15 A
0.68 V
TJ max.
150 °C
Package
TO-3PW
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
V30100PW
100
30
15
120
150
1.0
10 000
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 20-Dec-13
1 Document Number: 89178
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V30100PW-M3 Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
V30100PW-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
IR = 1.0 mA
IF = 8 A
IF = 15 A
IF = 8 A
IF = 15 A
Reverse current per diode
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.64
0.83
0.58
0.68
6.3
4.4
22
10
MAX.
-
-
0.91
-
0.76
-
-
450
26
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
V30100PW
2.0
1.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-3PW
V30100PW-M3/4W
4.5
PACKAGE CODE
4W
BASE QUANTITY
30/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
35
Resistive or Inductive Load
30
25
20
15
10
5 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
14
D = 0.8
12 D = 0.5
D = 0.3
10 D = 0.2
8 D = 0.1
D = 1.0
6
T
4
2
D = tp/T tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Dec-13
2 Document Number: 89178
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V30100PW-M3
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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