V30100PW-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: For definitions of pliance
- Part: V30100PW-M3
- Manufacturer: Vishay (official site)
- Size: 82.22 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V30100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier |
V30100PW-M3 Description
V30100PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A TMBS®.