V30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	V30120C-E3
Manufacturer	Vishay
File Size	214.00 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V30120C-E3 Datasheet
Additional preview pages of the V30120C-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

V30120S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V301HA32 - Varistor (Littelfuse)
V301HA40 - Varistor (Littelfuse)
V300A12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
V300B12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
V300C12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
V300LA10 - Line Voltage Operation/ Radial Lead (Littelfuse)
V300LA10CP - Radial Leaded Varistors (Littelfuse)

Other Datasheets by Vishay

Published: Aug 22, 2017 |