* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available: - Automotive orderi
V30DM120C Datasheet (121.52 KB)
V30DM120C
121.52 KB
Trench mos barrier schottky rectifier.
www.vishay.com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A eSMP® Se.
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