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V30DM120 - Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V30DM120
Manufacturer Vishay
File Size 118.92 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30DM120 Datasheet

Overview

www.vishay.com V30DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology generation 2 Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYP.

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