Vishay V30DM120
Trench MOS Barrier Schottky Rectifier
| Part No. | V30DM120 |
|---|---|
| Datasheet | V30DM120 Download |
| Manufacturer |  Vishay |
| Description | Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology generation 2 Available● Very low profile - typical height of 1.7 mm
● Ideal for automated placement
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 120 V 250 A VF at IF = 30 A (TA = 125 °C) 0.73 V TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration SingleMECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Termina...
