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V30DM45C - Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V30DM45C
Manufacturer Vishay
File Size 107.99 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30DM45C Datasheet

Overview

www.vishay.com V30DM45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5.

Key Features

  • Trench MOS Schottky technology Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESI.

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