V30DM120C Description
.vishay. V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V30DM120C Anode 1 K Anode.
V30DM120C Key Features
- Trench MOS Schottky technology
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Material categorization: for definitions of pliance please see .vishay./doc?99912