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V30DM120C - Trench MOS Barrier Schottky Rectifier

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Vishay

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V30DM120C Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V30DM120C

Datasheet Details

Part number	V30DM120C
Manufacturer	Vishay
File Size	121.52 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V30DM120C Datasheet
Additional preview pages of the V30DM120C datasheet.

Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 LINKS.

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Published: Jun 8, 2020 |