Datasheet4U Logo Datasheet4U.com

V30DM120C - Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet

Datasheet Details

Part number V30DM120C
Manufacturer Vishay
File Size 121.52 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30DM120C Datasheet

Overview

www.vishay.com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 LINKS.

More Datasheets from Vishay

Part Number Description
V30DM120 Trench MOS Barrier Schottky Rectifier
V30DM100C Trench MOS Barrier Schottky Rectifier
V30DM150C Trench MOS Barrier Schottky Rectifier
V30DM45C Trench MOS Barrier Schottky Rectifier
V30DM60CL Trench MOS Barrier Schottky Rectifier
V30D100C Trench MOS Barrier Schottky Rectifier
V30D170C Trench MOS Barrier Schottky Rectifier
V30D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V30D60C Trench MOS Barrier Schottky Rectifier