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V30K45
Vishay General Semiconductor
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
8
7 6 5
FlatPAK 5 x 6
1, 2, 3, 4
5, 6, 7, 8
1 2 3 4
FEATURES
• Trench MOS Schottky technology
Available
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package
30 A 45 V 240 A 0.
V30K45 Datasheet
