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V30K45
Vishay General Semiconductor
High Current Density Surface-Mount
(TMBS®) Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
8
7
6
5
FlatPAK 5 x 6
1, 2, 3, 4
5, 6, 7, 8
1
2
3
4
FEATURES
• Trench MOS Schottky technology
Available
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A (TA = 125 °C)
TJ max.
Package
30 A
45 V
240 A
0.46 V
150 °C
FlatPAK 5 x 6
Circuit configuration
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30K45
Device marking code
V3045
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV) (1)
IF(AV) (2)
IFSM
45
30
5
240
Operating junction temperature range
Storage temperature range
TJ (3)
TSTG
-40 to +150
-55 to +150
Notes
(1) With infinite heatsink
(2) Free air, mounted on recommended pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
UNIT
V
A
°C
Revision: 08-Jul-2019
1 Document Number: 87416
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000