Datasheet Summary
.vishay.
Vishay General Semiconductor
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
7 6 5
FlatPAK 5 x 6
1, 2, 3, 4
5, 6, 7, 8
1 2 3 4
Features
- Trench MOS Schottky technology
Available
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A (TA =...