* Low profile package Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qua
V3P6
101.15 KB
Trench mos barrier schottky rectifier.
www.vishay.com V3P6 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMP (DO-220AA) Cathode .
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