900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

V40100G-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40100G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF40100G
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB40100G
PIN 1
K
PIN 2
HEATSINK
VI40100G
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
100 V
200 A
0.67 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICALDATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40100G
Maximum repetitive peak reverse voltage
Maximum average forward rectified currentper device
(fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, L = 90 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VRRM
IF(AV)
IFSM
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF40100G VB40100G
100
40
20
200
VI40100G
230
1.0
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 09-Sep-13
1 Document Number: 88970
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V40100G-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode (1)
Rverse current per diode (2)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
100 min.
0.49
0.59
0.75
0.42
0.54
0.67
12
8
55
21
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.81
-
-
0.73
-
-
500
35
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100G
VF40100G
Typical thermal resistance per diode
RJC
2.0
5.0
VB40100G
2.0
VI40100G
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100G-E3/4W
1.88
ITO-220AB
VF40100G-E3/4W
1.75
TO-263AB
VB40100G-E3/4W
1.39
TO-263AB
VB40100G-E3/8W
1.39
TO-262AA
VI40100G-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
VF40100G
30
VB(I)40100G
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
18
D = 0.8
16
14 D = 0.5
12 D = 0.3
D = 1.0
10 D = 0.2
8
6 D = 0.1
4
T
2
D = tp/T
tp
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 09-Sep-13
2 Document Number: 88970
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V40100G-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 5 Pages
PDF Download

V40100G-E3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy