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Vishay Intertechnology Electronic Components Datasheet

V40100K Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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www.vishay.com
V40100K
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-220AB
PIN 1
PIN 3
3
2
1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A at TJ = 125 °C
TJ max.
Package
2 x 20 A
100 V
250 A
0.63 V
150 °C
TO-220AB
Diode variation
Dual common cathode
FEATURES
• 150 °C high performance Schottky diode
• Very low forward voltage drop
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• Negligible switching losses
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, high efficiency SMPS,
output rectification, freewheeling, reverse battery
protection, DC/DC system and increased power density
systems.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Marking: V40100K
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectifeid current (fig. 1)
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, IAS = 1.5 A, L = 60 mH per diode
Voltage rate of change
Operating junction and storage temperature range
SYMBOL
VRRM
IF(AV)
IFSM
EAS
dV/dt
TJ, TSTG
V40100K
100
40
20
250
67.5
10 000
-40 to +150
UNIT
V
A
A
mJ
V/μs
°C
Revision: 17-Aug-15
1 Document Number: 89208
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V40100K Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
V40100K
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA
IR = 10 mA
TA = 25 °C
VBR (2)
100
(minimum)
105
(minimum)
IF = 5.0 A
0.51
IF = 10 A
TA = 25 °C
0.59
Instantaneous forward voltage per diode
IF = 20 A
IF = 5.0 A
VF (1)
0.72
0.44
IF = 10 A
TA = 125 °C
0.53
IF = 20 A
0.63
Reverse current at rated VR per diode
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
IR (2)
9
10
-
21
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
-
0.82
-
-
0.67
-
-
1000
45
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum junction to case
per diode
per device
RJC
Typical thermal resistance case to heatsink
RJS
V40100-M3/4W
4
2
0.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100K-M3/4W
1.85
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
18
16
D = 0.8
14 D = 0.5
D = 0.3
12
10 D = 0.2
D = 1.0
8 D = 0.1
6
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 17-Aug-15
2 Document Number: 89208
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V40100K
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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