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V40100K Key Features

  • 150 °C high performance Schottky diode
  • Very low forward voltage drop
  • Optimized VF vs. IR trade off for high efficiency
  • Increased ruggedness for reverse avalanche
  • Negligible switching losses
  • Solder bath temperature 275 °C maximum, 10 s
  • Material categorization: for definitions of pliance

Other V40100K Datasheets

Manufacturer Part Number Description
Vishay Siliconix Logo Vishay V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Siliconix Logo Vishay V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Siliconix Logo Vishay V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Siliconix Logo Vishay V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100K Description

V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package 2 x 20 A 100 V 250 A 0.63 V 150 °C TO-220AB Diode variation Dual mon cathode.

V40100K Applications

  • halogen-free, RoHS-pliant, and mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whi