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V40170PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS®.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE.

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Datasheet Details

Part number V40170PW
Manufacturer Vishay
File Size 143.46 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40170PW Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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V40170PW www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.