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V60D120C Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number V60D120C
Manufacturer Vishay
File Size 121.24 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download V60D120C Download (PDF)

Overview

www.vishay.com V60D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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