V8PL6-M3 Description
V8PL6-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 4 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode.
V8PL6-M3 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak
- Material categorization: for definitions of pliance