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VB20M120C-M3 Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Download the VB20M120C-M3 datasheet PDF. This datasheet also includes the VB20M120C-E3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (VB20M120C-E3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VB20M120C-M3
Manufacturer Vishay
File Size 88.34 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB20M120C-M3 Datasheet

Overview

VB20M120C-E3, VB20M120C-M3, VB20M120CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB20M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM IFSM VF at IF = 10 A 120 V 120 A 0.64 V TJ max.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.