VB20M120C-E3
VB20M120C-E3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
VB20M120C-E3, VB20M120C-M3, VB20M120CHM3
.vishay.
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
TO-263AB
VB20M120C
PIN 1
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM IFSM VF at IF = 10 A
120 V 120 A 0.64 V
TJ max.
150 °C
Package
TO-263AB
Diode variation mon cathode
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: for definitions of...
