VB20M120C-M3

Manufacturer: Vishay

VB20M120C-M3 datasheet by Vishay.

This datasheet includes multiple variants, all published together in a single manufacturer document.

VB20M120C-M3 Datasheet Details

Part number	VB20M120C-M3
Datasheet	VB20M120C-M3 VB20M120C-E3 Datasheet (PDF)
File Size	88.34 KB
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB20M120C-E3, VB20M120C-M3, VB20M120CHM3 .vishay. 150 °C Package TO-263AB Diode variation mon cathode.

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
AEC-Q101 qualified available
Automotive ordering code: base P/NHM3
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Material categorization: for definitions of pliance please see .vishay./doc?99912

Part Number	Description
VB20M120C-E3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20M120CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20100S	High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier
VB20100SG	High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier