VB20M120C-M3 Datasheet | Vishay

VB20M120C-E3, VB20M120C-M3, VB20M120CHM3 .vishay. Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-263AB VB20M120C PIN 1 PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM IFSM VF at IF = 10 A 120 V 120 A 0.64 V TJ max. 150 °C Package TO-263AB Diode variation mon cathode Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: for definitions of...