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VB20M120C Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VB20M120C
Manufacturer Vishay
File Size 654.70 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download VB20M120C Download (PDF)

Overview

New Product VB20M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.

Key Features

  • Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB20M120C PIN 1 PIN 2 K.

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