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VB20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	VB20M120C
Manufacturer	Vishay ↗
File Size	654.70 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20M120C_Vishay.pdf

VB20M120C Product details

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB20M120C PIN 1 PIN 2 K.

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Published: Mar 28, 2012 |