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VB30M120C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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VB30M120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VB30M120C-M3

Datasheet Details

Part number	VB30M120C-M3
Manufacturer	Vishay
File Size	89.00 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30M120C-M3 Datasheet
Note	This datasheet PDF includes multiple part numbers: VB30M120C-M3, VB30M120C-E3. Please refer to the document for exact specifications by model.
Additional preview pages of the VB30M120C-M3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Aug 22, 2017 |