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VBT1045C-E3 Datasheet

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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www.vishay.com
VBT1045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VBT1045C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 5.0 A
TJ max.
Package
2 x 5.0 A
45 V
100 A
0.41 V
150 °C
TO-263AB
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
VBT1045C
45
10
5
100
-40 to +150
UNIT
V
A
A
°C
Revision: 09-Sep-13
1 Document Number: 89358
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VBT1045C-E3 Datasheet

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
VBT1045C-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.44
0.49
0.34
0.41
-
5
MAX.
-
0.58
-
0.50
500
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VBT1045C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VBT1045C-E3/4W
1.38
TO-263AB
VBT1045C-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
6
4
2
0
100
110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5 D = 0.3
3.0
2.5 D = 0.2
2.0
D = 0.1
1.5
1.0
D = 1.0
T
0.5
0
0
D = tp/T
tp
12345
Average Forward Current (A)
6
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 09-Sep-13
2 Document Number: 89358
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VBT1045C-E3
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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