VBT1045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VBT1045C-E3
Manufacturer	Vishay
File Size	86.73 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT1045C-E3 Datasheet
Additional preview pages of the VBT1045C-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VBT1045C PIN 1 K PIN 2.

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Published: Aug 22, 2017 |