* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT1045CBP Datasheet (139.53 KB)
VBT1045CBP
139.53 KB
Trench mos barrier schottky rectifier rectifier.
www.DataSheet.co.kr New Product VBT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection U.
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