* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VBT2045C-E3 Datasheet (97.16 KB)
VBT2045C-E3
97.16 KB
Dual low-voltage trench mos barrier schottky rectifier.
www.vishay.com VBT2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A .
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