VBT2045C-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: for definitions of pliance
- Part: VBT2045C-E3
- Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 97.16 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VBT2045CBP | Trench MOS Barrier Schottky Rectifier Rectifier |
| VBT2045BP | Trench MOS Barrier Schottky Rectifier |
| VBT2060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VBT2060G | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VBT2060G-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |