Datasheet4U Logo Datasheet4U.com

VBT3060C Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number VBT3060C
Manufacturer Vishay
File Size 151.89 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT3060C Datasheet

Overview

www.vishay.com VT3060C, VFT3060C, VBT3060C, VIT3060C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
VBT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VBT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VBT3045BP Trench MOS Barrier Schottky Rectifier
VBT3045BP-M3 Trench MOS Barrier Schottky Rectifier
VBT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier
VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier
VBT3045CBP-M3 Trench MOS Barrier Schottky Rectifier
VBT3080C-E3 Dual Trench MOS Barrier Schottky Rectifier
VBT3080S Trench MOS Barrier Schottky Rectifier
VBT3080S-E3 Trench MOS Barrier Schottky Rectifier