* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VBT3060C Datasheet (151.89 KB)
VBT3060C
151.89 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com VT3060C, VFT3060C, VBT3060C, VIT3060C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
📁 Related Datasheet
VBT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3045BP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3045CBP-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VBT3080S Trench MOS Barrier Schottky Rectifier (Vishay)
