VF20120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Material categorization: for definitions of pliance
- Part: VF20120C
- Manufacturer: Vishay (official site)
- Size: 80.94 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VF20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier |
VF20120C Description
VF20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® ITO-220AB 123 VF20120C PIN 1 PIN 2 PIN.