• Part: VF20120SG
  • Description: High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 76.45 KB
Download VF20120SG Datasheet PDF
Vishay
VF20120SG
VF20120SG is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® ITO-220AB 123 VF20120SG PIN 1 PIN 2 PIN 3 Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM IFSM VF at IF = 20 A 120 V...