VF20120SG Description
VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® ITO-220AB 123 VF20120SG PIN 1 PIN 2 PIN.
VF20120SG Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s
- Material categorization: For definitions of pliance