VF20120SG rectifier equivalent, high-voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s,
per .
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse bat.
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