VF20120SG Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s
- Material categorization: For definitions of pliance
- Part: VF20120SG
- Manufacturer: Vishay
- Size: 76.45 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VF20120SG-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VF20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |