VFT1060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Name: VFT1060C-E3
SKU: VFT1060C-E3-1143909

Vishay

The VFT1060C-E3 by Vishay is a Dual High Voltage Trench MOS Barrier Schottky Rectifier. Below is the official datasheet preview.

Datasheet Details

Part number	VFT1060C-E3
Manufacturer	Vishay
File Size	196.02 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT1060C-E3-Vishay.pdf
Additional preview pages of the VFT1060C-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA K.

📁 VFT1060C-E3 Similar Datasheet

VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT150-28 - VHF POWER MOSFET Channel Enhancement Mode (Advanced Semiconductor)
VFT150-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

Other Datasheets by Vishay

Published: Aug 30, 2017 |