* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VFT1080S-E3 Datasheet (144.43 KB)
VFT1080S-E3
144.43 KB
Trench mos barrier schottky rectifier.
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = .
📁 Related Datasheet
VFT1080S Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VFT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT1045CBP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT15-12 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
