* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Ha
VFT1080S Datasheet (135.55 KB)
VFT1080S
135.55 KB
Trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS .
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