* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
VFT6045C-M3 Datasheet (80.44 KB)
VFT6045C-M3
80.44 KB
Dual low-voltage trench mos barrier schottky rectifier.
www.vishay.com VFT6045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A T.
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