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Vishay Intertechnology Electronic Components Datasheet

VS-6CWT04FN Datasheet

High Performance Schottky Generation

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www.vishay.com
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
13
Anode 2 Anode
Common
cathode
VS-6CUT04
2
1 Common 3
Anode cathode Anode
VS-6CWT04FN
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
45 V
0.54 V
3 mA at 125 °C
175 °C
Common cathode
14 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells pybass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
3 Apk, TJ = 125 °C (typical, per leg)
Range
VALUES
45
0.46
- 55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
VS-6CUT04
VS-6CWT04FN
45
UNITS
V
V
°C
UNITS
V
Revision: 03-Nov-11
1 Document Number: 94650
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-6CWT04FN Datasheet

High Performance Schottky Generation

No Preview Available !

www.vishay.com
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche
energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.3 A, L = 16 mH
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
VALUES
3
6
440
70
14
IAS at
TJ max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.535
0.615
0.485
0.570
-
-
240
8.0
-
MAX. UNITS
0.600
0.680
0.540
V
0.640
25 μA
3 mA
- pF
- nH
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
TJ, TStg
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
4.7
2.35 °C/W
0.3
0.3 g
0.01 oz.
6CUT04
6CWT04FN
Revision: 03-Nov-11
2 Document Number: 94650
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-6CWT04FN
Description High Performance Schottky Generation
Maker Vishay
Total Page 8 Pages
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