VS-ETX1506FP-M3 Datasheet | Vishay

FEATURES - Hyperfast recovery time, extremely low Qrr - Low forward voltage drop - 175 °C operating junction temperature - Low leakage current - Fully isolated package (VINS = 2500 VRMS) - True 2 pin package - Designed and qualified according to JEDEC®-JESD 47 - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current in DC Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TC = 71 °C TJ = 25 °C VALUES 600 15 120 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA Forward voltage IF = 15 A IF = 15 A, TJ = 150 °C Reverse leakage current VR = VR rated TJ = 150 °C, VR = VR rated Junction capacitance VR = 600 V Series inductance Measured lead to lead 5 mm from package...