* Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode
* Very low conduction and switching losses
* Fully isolate package (2500 VAC/RMS)
* Very low internal inductance ( 5 nH typical)
* Indus
VS-GA200SA60UP Datasheet (176.27 KB)
VS-GA200SA60UP
176.27 KB
Igbt.
www.vishay.com VS-GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A SOT-227 PRIMARY CHARACTERISTIC.
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