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VS-GB200TH120N Datasheet Molding Type Module IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed collector current IC ICM (1) TC = 25 °C TC = 80 °C tp = 1 ms Diode continuous forward current IF TC = 80 °C Diode maximum forward current IFM tp = 1 ms Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GB200TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Package Circuit 1200 V 200 A 1.

Key Features

  • Low VCE(on) SPT+ IGBT technology.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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