VS-GB200TS60NPbF Description
VS-GB200TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A INT-A-PAK PRODUCT SUMMARY VCES 600 V IC DC 209 A VCE(on) at 200 A, 25 °C 2.6 V Package INT-A-PAK Circuit Half Bridge with SMD Gate Resistor.
VS-GB200TS60NPbF Key Features
- Generation 5 Non Punch Through (NPT)
- Ultrafast: Optimized for hard switching speed
- Low VCE(on)
- 10 μs short circuit capability
- Square RBSOA
- Positive VCE(on) temperature coefficient
- HEXFRED® antiparallel diode with ultrasoft reverse
- Industry standard package
- Al2O3 DBC
- UL approved file E78996